switching diode ump11n ? applications ? dimensions (unit : mm) ? land size figure (unit : mm) ultra high speed switching ? features 1) small mold type. (umd6) 2) high reliability. ? construction silicon epitaxial planar ? structure ? taping specifications (unit : mm) ?absolute maximum ratings (ta=25c) symbol unit v rm v v r v i fm ma io ma i surge a pd mw tj c tstg c ?electrical characteristics (ta=25c) symbol min. typ. max. unit v f - - 1.2 v i f =100ma i r - - 0.1 a v r =70v ct - - 3.5 pf v r =6v , f=1mhz trr - - 4 ns v r =6v , if=5ma , rl=50 ? capacitance between terminals reverse recovery time parameter conditions forward voltage reverse current storage temperature ? 55 to ? 150 power dissipation 150 junction temperature 150 average retcified forward current 100 surge current (t=1us) 4 reverse voltage (dc) 80 forward current (single) 300 parameter limits reverse voltage (repetitive peak) 80 umd6 0.35 0.9 1.6 0.650.65 2.20.1 4.00.1 4.00.1 2.00.05 1.50.1 0 3.50.05 1.750.1 8.00.2 1.10.1 2.450.1 2.40.1 5.50.2 1.150.1 2.40.1 0.30.1 00.5 jedec : sot-363 rohm : umd6 jeita : sc-88 dot (year week factory) 2.00.2 2.10.1 1.250.1 0.25 0.1 0.05 `?? ? (5) (6) (4) 1.30.1 0.65 0.65 (1) (3) (2) 0.150.05 0.90.1 0.7 0.1min 00.1 each lead has same dimension 1/2 2011.06 - rev.b data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
ump11n 0 1 2 3 4 5 6 7 8 9 10 ave:1.93ns ta=25 vr=6v if=5ma rl=50 n=10pcs forward voltagevf(mv) vf-if characteristics forward current:if(ma) reverse current:ir(na) reverse voltagevr(v) vr-ir characteristics capacitance between terminals:ct(pf) reverse voltage:vr(v) vr-ct characteristics vf dispersion map forward voltage:vf(mv) reverse current:ir(na) ir dispersion map capacitance between terminals:ct(pf) ct dispersion map ifsm disresion map peak surge forward current:ifsm(a) peak surge forward current:ifsm(a) number of cycles ifsm-cycle characteristics peak surge forward current:ifsm(a) time:t(ms) ifsm-t characteristics time:t(ms) rth-t characteristics transient thaermal impedance:rth (/w) trr dispersion map reverse recovery time:trr(ns) electrostatic ddischarge test esd(kv) esd dispersion map 0.1 1 10 100 0 100 200 300 400 500 600 700 800 900 1000 ta=-25 ta=125 ta=75 ta=25 ta=150 0.001 0.01 0.1 1 10 100 1000 10000 0 1020304050607080 ta=-25 ta=25 ta=75 ta=125 ta=150 0.1 1 10 0 5 10 15 20 f=1mhz 850 860 870 880 890 900 ave:870.1mv ta=25 if=100ma n=30pcs 0 10 20 30 40 50 60 70 80 90 100 ta=25 vr=70v n=10pcs ave:4.310na 0 1 2 3 4 5 6 7 8 9 10 ave:2.850pf ta=25 vr=0v f=1mhz n=10pcs 0 5 10 15 20 ave:2.50a 8.3ms ifsm 1cyc 0 1 2 3 4 5 1 10 100 8.3ms ifsm 1cyc 8.3ms 1 10 100 0.1 1 10 100 t ifsm 10 100 1000 0.001 0.01 0.1 1 10 100 1000 rth(j-a) rth(j-c) 1ms im=1ma if=10ma 300us time mounted on epoxy board 0 1 2 3 4 5 6 7 8 9 10 ave:1.47kv c=200pf r=0 c=100pf r=1.5k ave:2.98kv 2/2 2011.06 - rev.b www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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